10N65-Q

UNISONIC TECHNOLOGIES CO., LTD 10N65-Q 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65-Q is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  FEATURES * RDS(ON) < 1.0Ω @ VGS=10V, ID = 5 A * High Switching Speed * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N65L-TA3-T 10N65G-TA3-T TO-220 10N65L-TF3-T 10N65G-TF3-T TO-220F 10N65L-TF1-T 10N65G-TF1-T TO-220F1 10N65L-TF2-T 10N65G-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-091.a 10N65-Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±30 V 10 A Drain Current Continuous Pulsed (Note 2) ID IDM 10 A 38 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 350 mJ 4.5 V/ns TO-220 156 W Power Dissipation TO-220F/TO-220F1 PD 50 W TO-220F2 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Stora...