OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) 100% Avalanche tested
IPB120N03S4L-03
Product Summary V DS R DS(on),max ID
30 V 3 mW 120 A
PG-TO263-3-2
Type IPB120N03S4L-03
Package PG-TO263-3-2
Ordering Code Marking - 4N03L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
88
480 75 120 ±16 79 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.1
page 1
2014-04-28
IPB120N03S4L-03
Parameter
Symbol
Conditions
Thermal characteristics2) Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.9 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
Gate threshold voltage
V GS(th) V DS=V GS, I D=40µA
30 -
-V
1.0 1.6 2.2
Zero gate voltage drain current
...
