Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPA80R310CE
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
800VCoolMOS™CEPowerTransistor
IPA80R310CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
•Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications
Applications
LEDLightingandAdapterinQRFlybacktopology
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C RDS(on),max
800 310
V mΩ
Qg.typ
91
nC
ID,pulse
51
A
Eoss@400V
6.7
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode IPA80R310CE
Package PG-TO 220 FullPAK
Marking 8R310CE
RelatedLinks see Appendix A
Final Data Sheet
2 Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R310CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3 Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor IPA80R310CE
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation Storage temperature Operating junction temperature Mounting torque Continuous diode forward current Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse EAS EAR IAR dv/dt VGS VGS Ptot Tstg Tj IS IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage for TO-220FP
dif/dt VISO
Min. -20 -30 -40 -40 -
-
-
-
Values Typ. Max. - 16.7 - 10.6 - 51 - 670 - 0.50 - 3.40 - 50 - 20 - 30 - 35 - 150 - 150 - 50 - 16.7 - 51
-4
- 400
- 2500
Unit Note/TestCondition
A
TC = 25°C TC = 100°C
A TC=25°C
mJ ID=3.4A; VDD=50V; see table 10
mJ ID=3.4A; VDD=50V; see table 10
AV/ns VDS=0...640V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
Ncm M2.5 screws A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C see table 8
V Vrms,TC=25°C,t=1min
1) Limited by Tj max <150°C. 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG Final Data Sheet
4
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor IPA80R310CE
3Thermalcharacteristics
Table3ThermalcharacteristicsTO-220FullPAK
Parameter
Symbol
Values Min. Typ. Max.
Thermal resistance, junction - case RthJC Thermal resistance, junction - ambient RthJA
- - 3.6 - - 80
Soldering temperature, wavesoldering only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W °C/W leaded °C 1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5 .