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12N65 Dataheets PDF



Part Number 12N65
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 12N65 Datasheet12N65 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been es.

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UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.  FEATURES * RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-583.E 12N65  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N65L-TA3-T 12N65G-TA3-T 12N65L-TF1-T 12N65G-TF1-T 12N65L-TF2-T 12N65G-TF2-T 12N65L-TF3-T 12N65G-TF3-T 12N65L-T2Q-T 12N65G-T2Q-T 12N65L-TQ2-T 12N65G-TQ2-T 12N65L-TQ2-R 12N65G-TQ2-R 12N65L-T3P-T 12N65G-T3P-T 12N65L-T3N-T 12N65G-T3N-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-262 TO-263 TO-263 TO-3P TO-3PN Power MOSFET Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube  MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-583.E 12N65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 12 A Drain Current Continuous Pulsed (Note 2) ID IDM 12 A 48 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 790 mJ 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 TO-263 225 W Power Dissipation TO-220F/TO-220F1 PD 51 W TO-220F2 54 W TO-3P/TO-3PN 260 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 TO-262/TO-263 TO-3P/TO-3PN TO-220/TO-262 TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2 TO-3P/TO-3PN SYMBOL θJA θJC RATING 62.5 40 0.56 2.43 2.31 0.48 UNIT °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-583.E 12N65 Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25 V, VGS = 0 V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge QG QGS QGD VDS= 520V,ID= 12A, VGS= 10 V (Note 1, 2) Turn-On Delay Time tD(ON) Turn-On Rise Time Turn-Off Delay Time tR tD(OFF) VDD = 325V, ID = 12A, RG = 25Ω (Note 1, 2) Turn-Off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Reverse Recovery Time trr VGS = 0 V, IS = 12A, Reverse Recovery Charge Qrr dIF/dt = 100 A/µs (Note 1) Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 650 V 1 µA ±100 nA 0.7 V/°C 2.0 4.0 V 0.65 0.85 Ω 1480 1900 pF 200 270 pF 25 35 pF 42 54 nC 8.6 nC 21 nC 30 70 ns 115 240 ns 95 200 ns 85 180 ns 12 A 48 1.4 380 3.5 A V ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-583.E 12N65  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Rec.


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