Document
UNISONIC TECHNOLOGIES CO., LTD
12N65
12A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
FEATURES
* RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
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QW-R502-583.E
12N65
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65L-TA3-T
12N65G-TA3-T
12N65L-TF1-T
12N65G-TF1-T
12N65L-TF2-T
12N65G-TF2-T
12N65L-TF3-T
12N65G-TF3-T
12N65L-T2Q-T
12N65G-T2Q-T
12N65L-TQ2-T
12N65G-TQ2-T
12N65L-TQ2-R
12N65G-TQ2-R
12N65L-T3P-T
12N65G-T3P-T
12N65L-T3N-T
12N65G-T3N-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-262 TO-263 TO-263 TO-3P TO-3PN
Power MOSFET
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tube Tape Reel Tube Tube
MARKING
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QW-R502-583.E
12N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS ±30 V IAR 12 A
Drain Current
Continuous Pulsed (Note 2)
ID IDM
12 A 48 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
790 mJ 24 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
TO-220/TO-262 TO-263
225 W
Power Dissipation
TO-220F/TO-220F1
PD
51 W
TO-220F2
54 W
TO-3P/TO-3PN
260 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2 TO-262/TO-263
TO-3P/TO-3PN
TO-220/TO-262
TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-3P/TO-3PN
SYMBOL θJA
θJC
RATING
62.5
40 0.56 2.43 2.31 0.48
UNIT
°C/W
°C/W °C/W °C/W °C/W °C/W
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QW-R502-583.E
12N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
Gate-Source Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VDS= 520V,ID= 12A, VGS= 10 V (Note 1, 2)
Turn-On Delay Time
tD(ON)
Turn-On Rise Time Turn-Off Delay Time
tR tD(OFF)
VDD = 325V, ID = 12A, RG = 25Ω (Note 1, 2)
Turn-Off Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 12A
Reverse Recovery Time
trr VGS = 0 V, IS = 12A,
Reverse Recovery Charge
Qrr dIF/dt = 100 A/µs (Note 1)
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V 1 µA
±100 nA 0.7 V/°C
2.0 4.0 V 0.65 0.85 Ω
1480 1900 pF 200 270 pF 25 35 pF
42 54 nC 8.6 nC 21 nC 30 70 ns 115 240 ns 95 200 ns 85 180 ns
12 A
48
1.4 380 3.5
A
V ns µC
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12N65
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Rec.