Stansard SCRs
SEMICONDUCTOR
16PT Series RRooHHSS
Stansard SCRs, 16A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 16
600 to 1000...
Description
SEMICONDUCTOR
16PT Series RRooHHSS
Stansard SCRs, 16A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 16
600 to 1000 25
Unit A V mA
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications.
Using clip assembly technology, they provide a superior performance in surge current capabilities.
A
K AG
TO-251 (I-PAK) (16PTxxF)
A
A
A K
G
TO-252 (D-PAK) (16PTxxG)
KAG
KAG
TO-220AB (Non-lnsulated) (16PTxxA)
TO-220AB (lnsulated) (16PTxxAI)
A
KA G
TO-263 (D2PAK) (16PTxxH)
2(A)
3(G) 1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave (180° conduction angle )
IT(RMS)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage
Repetitive peak reverse voltage Storage temperature range
Operating junction temperature range
IT(AV)
ITSM
I2t dI/dt IGM PGM PG(AV) VDRM VRRM Tstg
Tj
TEST CONDITIONS
TO-251/TO-252 TO-220AB/TO-263
TO-220AB insulated
TO-251/TO-252 TO-220AB/TO-263
Tc=110°C Tc=86°C Tc=110°C
TO-220AB insulated F =50 Hz F =60 Hz
tp = 10 ms
Tc=86°C t = 20 ms t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs Tp =20µs
Tj =125ºC
Tj = 125ºC Tj = 125ºC
Tj =125ºC
VALUE
16
10
190 200 180 50
4 10 ...
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