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16PT

nELL

Stansard SCRs

SEMICONDUCTOR 16PT Series RRooHHSS Stansard SCRs, 16A Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 16 600 to 1000...


nELL

16PT

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Description
SEMICONDUCTOR 16PT Series RRooHHSS Stansard SCRs, 16A Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 16 600 to 1000 25 Unit A V mA DESCRIPTION The 16PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. A K AG TO-251 (I-PAK) (16PTxxF) A A A K G TO-252 (D-PAK) (16PTxxG) KAG KAG TO-220AB (Non-lnsulated) (16PTxxA) TO-220AB (lnsulated) (16PTxxAI) A KA G TO-263 (D2PAK) (16PTxxH) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range Operating junction temperature range IT(AV) ITSM I2t dI/dt IGM PGM PG(AV) VDRM VRRM Tstg Tj TEST CONDITIONS TO-251/TO-252 TO-220AB/TO-263 TO-220AB insulated TO-251/TO-252 TO-220AB/TO-263 Tc=110°C Tc=86°C Tc=110°C TO-220AB insulated F =50 Hz F =60 Hz tp = 10 ms Tc=86°C t = 20 ms t = 16.7 ms F = 60 Hz Tj = 125ºC Tp = 20 µs Tp =20µs Tj =125ºC Tj = 125ºC Tj = 125ºC Tj =125ºC VALUE 16 10 190 200 180 50 4 10 ...




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