Document
Ordering number : EN6387B
MCH6101
Bipolar Transistor
–15V, –1.5A, Low VCE(sat), PNP Single MCPH6
http://onsemi.com
Applications
• Relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
• High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature
VCBO VCEO VEBO IC ICP IB PC Tj
Storage Temperature
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings --15 --15 --5 --1.5 --3
--300 1.0 150
--55 to +150
Unit V V V A A mA W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2.1 0.07 0.85 0.25 1.6 0.25
Package Dimensions unit : mm (typ) 7022A-007
2.0 654
0.15
MCH6101-TL-E
0 to 0.02
1 23 0.65 0.3
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
AA
LOT No. LOT No.
TL
123 654
1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector
MCPH6
Electrical Connection
1, 2,
3
4
Semiconductor Components Industries, LLC, 2013 September, 2013
D0512 TKIM TC-00002850/D1004 TSIM TB-00000350/70500TS (KOTO) TA-2787 No.6387-1/6
MCH6101
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time
ICBO IEBO hFE fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf
VCB= --12V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --100mA VCE= --2V, IC= --300mA VCB= --10V, f=1MHz IC= --750mA, IB= --15mA IC= --750mA, IB= --15mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ IE= --10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
50Ω
VR
IB1 IB2
RB + 220μF
+ 470μF
OUTPUT RL
VBE=5V
VCC= --5V
IC=20IB1= --20IB2= --750mA
Ordering Information
Device MCH6101-TL-E
Package MCPH6
Shipping 3,000pcs./reel
Ratings min typ
200 430 15
--110 --0.85 --15 --15 --5
30 90 12
max --0.1 --0.1 560
--180 --1.2
Unit
μA μA
MHz pF mV V V V V ns ns ns
memo Pb Free
Collector Current, IC -- A --50mA --40mA
Collector Current, IC -- A Ta=75°C
25°C --25°C
IC -- VCE
--2.0
--1.8
--30mA
--20mA
--15mA
--1.6
--1.4 --10mA --1.2 --8mA --1.0 --6mA
--0.8 --4mA
--0.6
--2mA
--0.4
--0.2
0 0
IB=0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE -- V IT00882
--1.6
VCE= --2V
--1.4
IC -- VBE
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Base-to-Emitter Voltage, VBE -- V IT00884
No.6387-2/6
MCH6101
DC Current Gain, hFE
hFE -- IC
1000
VCE= --2V
7
5
Ta=75°C 3 25°C
--25°C
2
100
7 5 --0.01
100 7 5
23
5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC -- A
Cob -- VCB
IT00886
f=1MHz
3 2
10 7 5
3 2
1.0 --1.0
--1000 7 5
3 2
23
5 7 --10
23
Collector-to-Base Voltage, VCB -- V IT00890
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Gain-Bandwidth Product, fT -- MHz
fT -- IC
1000
VCE= --2V
7 5
3
2
100 7 5
3 --0.01
--1000 7 5 3 2
2 3 5 7 --0.1
2 3 5 7 --1.0
23
Collector Current, IC -- A
VCE(sat) -- IC
IT00888
IC / IB=20
--100 7 5
3 2
Ta=7-5-2°C5°C 25°C
--10 7 --0.01
--10 7 5
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
VBE(sat) -- IC
23 IT00892
IC / IB=50
3 2
Output Capacitance, Cob -- pF
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
--100 7 5
3 2
Ta=75°C --25°C
25°C
--10 --0.01
23
--10 7
5 ICP= --3A
3
2 IC= --1.5A
--1.0 7 5
3 2
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
ASO
23 IT00894
1ms
100ms 10ms DC operation
500μs
100μs
--0.1 7 5
3 Ta=25°C 2 Single pulse --0.01 When mounted on ceramic substrate (600mm2✕0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector-to-Emitter Voltage, VCE -- V
23 IT00898
Collector Dissipation, PC -- W
--1.0 Ta= --25°C
7
5 75°C 25°C
3
2
--0.1 --0.01
1.4
1.2
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
PC -- Ta
23 IT00896
When mounted on ceramic substrate (600mm2✕0.8mm)
1.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambie.