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MCH6101 Dataheets PDF



Part Number MCH6101
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet MCH6101 DatasheetMCH6101 Datasheet (PDF)

Ordering number : EN6387B MCH6101 Bipolar Transistor –15V, –1.5A, Low VCE(sat), PNP Single MCPH6 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C .

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Ordering number : EN6387B MCH6101 Bipolar Transistor –15V, –1.5A, Low VCE(sat), PNP Single MCPH6 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (600mm2×0.8mm) Ratings --15 --15 --5 --1.5 --3 --300 1.0 150 --55 to +150 Unit V V V A A mA W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2.1 0.07 0.85 0.25 1.6 0.25 Package Dimensions unit : mm (typ) 7022A-007 2.0 654 0.15 MCH6101-TL-E 0 to 0.02 1 23 0.65 0.3 Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking AA LOT No. LOT No. TL 123 654 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector MCPH6 Electrical Connection 1, 2, 3 4 Semiconductor Components Industries, LLC, 2013 September, 2013 D0512 TKIM TC-00002850/D1004 TSIM TB-00000350/70500TS (KOTO) TA-2787 No.6387-1/6 MCH6101 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB= --12V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --100mA VCE= --2V, IC= --300mA VCB= --10V, f=1MHz IC= --750mA, IB= --15mA IC= --750mA, IB= --15mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ IE= --10μA, IC=0A See specified Test Circuit. Switching Time Test Circuit PW=20μs D.C.≤1% INPUT 50Ω VR IB1 IB2 RB + 220μF + 470μF OUTPUT RL VBE=5V VCC= --5V IC=20IB1= --20IB2= --750mA Ordering Information Device MCH6101-TL-E Package MCPH6 Shipping 3,000pcs./reel Ratings min typ 200 430 15 --110 --0.85 --15 --15 --5 30 90 12 max --0.1 --0.1 560 --180 --1.2 Unit μA μA MHz pF mV V V V V ns ns ns memo Pb Free Collector Current, IC -- A --50mA --40mA Collector Current, IC -- A Ta=75°C 25°C --25°C IC -- VCE --2.0 --1.8 --30mA --20mA --15mA --1.6 --1.4 --10mA --1.2 --8mA --1.0 --6mA --0.8 --4mA --0.6 --2mA --0.4 --0.2 0 0 IB=0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Collector-to-Emitter Voltage, VCE -- V IT00882 --1.6 VCE= --2V --1.4 IC -- VBE --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Base-to-Emitter Voltage, VBE -- V IT00884 No.6387-2/6 MCH6101 DC Current Gain, hFE hFE -- IC 1000 VCE= --2V 7 5 Ta=75°C 3 25°C --25°C 2 100 7 5 --0.01 100 7 5 23 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Cob -- VCB IT00886 f=1MHz 3 2 10 7 5 3 2 1.0 --1.0 --1000 7 5 3 2 23 5 7 --10 23 Collector-to-Base Voltage, VCB -- V IT00890 VCE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Gain-Bandwidth Product, fT -- MHz fT -- IC 1000 VCE= --2V 7 5 3 2 100 7 5 3 --0.01 --1000 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 23 Collector Current, IC -- A VCE(sat) -- IC IT00888 IC / IB=20 --100 7 5 3 2 Ta=7-5-2°C5°C 25°C --10 7 --0.01 --10 7 5 23 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A VBE(sat) -- IC 23 IT00892 IC / IB=50 3 2 Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector Current, IC -- A --100 7 5 3 2 Ta=75°C --25°C 25°C --10 --0.01 23 --10 7 5 ICP= --3A 3 2 IC= --1.5A --1.0 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A ASO 23 IT00894 1ms 100ms 10ms DC operation 500μs 100μs --0.1 7 5 3 Ta=25°C 2 Single pulse --0.01 When mounted on ceramic substrate (600mm2✕0.8mm) --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 23 IT00898 Collector Dissipation, PC -- W --1.0 Ta= --25°C 7 5 75°C 25°C 3 2 --0.1 --0.01 1.4 1.2 23 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A PC -- Ta 23 IT00896 When mounted on ceramic substrate (600mm2✕0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambie.


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