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MPSA44

Diotec

High voltage Si-epitaxial transistors

MPSA44 MPSA44 NPN High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren Versio...


Diotec

MPSA44

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MPSA44 MPSA44 NPN High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2010-09-30 Power dissipation Verlustleistung Plastic case E B C Kunststoffgehäuse 16 9 18 Weight approx. Gewicht ca. 2 x 2.54 Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße [mm] Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS Grenzwerte (TA = 25°C) MPSA44 400 V 500 V 6V 625 mW 1) 300 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 400 V MPSA44 Emitter-Base cutoff current – Emitterreststrom IB = 0, VEB = 4 V MPSA44 Collector saturation voltage – Kollektor-Sättigungsspannung 2) IC = 1 mA, IB = 0.1 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA MPSA44 ICB0 IEB0 VCEsat VCEsat VCEsat Kennwerte (Tj = 25°C) Min. Typ. Max. – – 100 nA – – 100 nA – – 400 mV 500 mV 750 mV 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gültig, w...




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