Automotive N-Channel MOSFET
www.vishay.com
SQP60N06-15
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS...
Description
www.vishay.com
SQP60N06-15
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
TO-220AB
60 0.015
56 Single
D
FEATURES TrenchFET® Power MOSFET
Package with Low Thermal Resistance AEC-Q101 Qualifiedd
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
G
GD S Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel MOSFET
TO-220 SQP60N06-15-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 60 ± 20 56 32 60 190 29 42 107 35
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 40 1.4
UNIT V
A
mJ W °C
UNIT °C/W
S13-0840-Rev. A, 22-Apr-13
1
Document Number: 63554
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DES...
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