SQP25N15-52

www.vishay.com SQP25N15-52 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package TO-220AB 150 0.052 25 Single TO-220 FEATURES TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified d Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 25 16 50 65 30 45 107 35 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.4 UNIT V A mJ W °C UNIT °C/W S15-2048-Rev. A, 31-Aug-15 1 Document Number: 66974 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DES...