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PJS6835 Dataheets PDF



Part Number PJS6835
Manufacturers Pan Jit International
Logo Pan Jit International
Description 20V P-CHANNEL MOSFET
Datasheet PJS6835 DatasheetPJS6835 Datasheet (PDF)

PPJS6835 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -500mA SOT-23 6L Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.000.

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PPJS6835 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -500mA SOT-23 6L Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.0141 grams  Marking: SG5 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +10 -500 -1000 500 4 -55~150 250 UNITS V V mA mA mW mW/ oC oC oC/W March 6,2015-REV.00 Page 1 PPJS6835 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS TEST CONDITION VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VGS=-4.5V, ID=-500mA VGS=-2.5V, ID=-200mA VGS=-1.8V, ID=-100mA VGS=-1.5V, ID=-50mA VGS=-1.2V, ID=-10mA VDS=-16V, VGS=0V VGS=+8V, VDS=0V VDS=-10V, ID=-500mA, VGS=-4.5V (Note 1,2) VDS=-10V, VGS=0V, f=1.0MHZ VDD=-10V, ID=-500mA, VGS=-4.5V, RG=6Ω (Note 1,2) --- Diode Forward Voltage VSD IS=-500mA, VGS=0V MIN. -20 -0.3 - - - - TYP. -0.59 0.85 0.98 1.15 1.33 1.5 +2 1.4 0.19 0.2 38 15 9 7.2 21 85 116 - -0.93 MAX. UNITS -V -1.0 V 1.2 1.5 2.2 Ω 3.6 6.0 -1 uA +10 uA - nC - pF - ns - -500 -1.3 mA V NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. March 6,2015-REV.00 Page 2 PPJS6835 TYPICAL CHARACTERISTIC CURVES Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 On-Resistance Variation with VGS. March 6,2015-REV.00 Fig.6 Body Diode Characteristics.


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