Document
PPJS6835
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current -500mA
SOT-23 6L
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.0141 grams Marking: SG5
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +10 -500
-1000 500
4 -55~150
250
UNITS V V mA mA
mW mW/ oC
oC
oC/W
March 6,2015-REV.00
Page 1
PPJS6835
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS VGS(th)
RDS(on)
IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
IS
TEST CONDITION
VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VGS=-4.5V, ID=-500mA VGS=-2.5V, ID=-200mA VGS=-1.8V, ID=-100mA VGS=-1.5V, ID=-50mA VGS=-1.2V, ID=-10mA VDS=-16V, VGS=0V VGS=+8V, VDS=0V
VDS=-10V, ID=-500mA, VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V, f=1.0MHZ
VDD=-10V, ID=-500mA, VGS=-4.5V, RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-500mA, VGS=0V
MIN.
-20 -0.3
-
-
-
-
TYP.
-0.59 0.85 0.98 1.15 1.33 1.5
+2
1.4 0.19 0.2 38 15
9 7.2 21 85 116
-
-0.93
MAX. UNITS
-V -1.0 V 1.2 1.5 2.2 Ω 3.6 6.0 -1 uA +10 uA
- nC - pF -
ns -
-500 -1.3
mA V
NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing.
March 6,2015-REV.00
Page 2
PPJS6835
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 6,2015-REV.00
Fig.6 Body Diode Characteristics.