10N65-C

UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 0.86Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N65L-TF3-T 10N65G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube  MARKING INFORMATION PACKAGE TO-220 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 7 QW-R502-A79.a 10N65-C Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 10 A 10 A 38 A 156 mJ 15.6 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 156 W TJ +150 °C Operating Temperature Storage Tempe...