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MBR830MFS

ON Semiconductor

SWITCHMODE Power Rectifiers

MBR830MFS, NRVB830MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features...


ON Semiconductor

MBR830MFS

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Description
MBR830MFS, NRVB830MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After Board Mounting Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices Mechanical Characteristics: Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 143°C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 143°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IF(AV) IFRM IFSM 30 8.0 16 150 V A A A Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) Tstg −65 to +150 °C TJ −40 to +150 °C EAS 100 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Rati...




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