Document
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series.
00 (CHIP) 18 (SOT 343 STYLE)
E B
35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD)
NE68018 NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
6V, 5 m A 3V, 5 mA
25 20
15
2.5 10
2.0 5
1.5
1.0
.5 300 500
1000
2000
3000
Frequency, f (GHz)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
NE680 SERIES
DISCONTINUED
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
fT NF
GNF
MAG
|S21E|2
hFE ICBO IEBO CRE3 PT RTH (J-A) RTH (J- C)
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz
Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz
Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz f = 2 GHz f = 4 GHz
Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz f = 2 GHz f = 4 GHz
Forward Current Gain2 at VCE = 6 V, IC = 10 mA VCE = 3 V, IC = 5 mA
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
NE68000
00 (CHIP) UNITS MIN TYP MAX
NE68018 2SC5013
18
MIN TYP MAX
NE68019 2SC5008
19
MIN TYP MAX
GHz
dB dB dB
10
1.7 2.4 2.6
10
1.6 1.8 3
10
1.7 1.9
dB 14 13.5
dB 12.5
10.2
9.6
dB 8
dB 18.5 19 18.5
dB 16.2 12.7 11.8
dB 10.2
8.2
7.3
dB 17 dB 10.5 12.5 dB 7.5
15.5 7.5 9.8
4.6
15 9.2 4.4
50 100 250 50 100 250 80
160
µA 1.0 1.0 1.0
µA 1.0 1.0 1.0
pF
0.3 0.7
0.3 0.7
mW 400 150 100
°C/W
833 1000
°C/W
120
200
200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE68030
NE68033
NE68035
NE68039/39R
2SC4228 30
2SC3585 33
2SC3587 35
2SC4095 39
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT NF
GNF
MAG
|S21E|2
hFE ICBO IEBO Cre3
PT RTH (J-A) RTH (J- C)
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz
10
10
10
10
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz
dB dB dB
1.5 1.7 2.9
1.6 1.8 3.0 2.1
1.7 2.4 2.6
1.7 2.5 2.6
Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz
dB dB dB
12.5 9.4 5.3
11.0 9.0 4.2
12.5 8
11 6.5
Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz f = 2 GHz f = 4 GHz
dB dB dB
17 10.9 6.8
17 10.9 6.7
18.5 16.2 10.2
18 12.4 8.7
Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz f = 2 GHz f = 2 GHz
dB dB dB
13.5 8.5 3.6
13 17 6.7 10.5 12.5 3.7 7.5
14.5 9.6 4.9
Forward Current Gain2 at VCE = 6 V, IC = 10 mA VCE = 3 V, IC = 5 mA
50 100 250 50 100 250 50 100 250 50 100 250
Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
µA
1.0
1.0
1.0
1.0
Feedback Capacitance at VCB = 3V, IE = 0 mA, f = 1 MHz VCE = 10 V, IE = 0 mA, f = 1 MHz
pF 0.3 0.7
pF
0.3 0.8
0.2 0.7
0.25 0.8
Total Power Dissipation
mW 150 200 290 200
Thermal Resistance (Junction to Ambient)
°C/W
833
620
550
620
Thermal Resistance (Junction to Case)
°C/W
200
200
200
200
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
InsertionDGain,|S21|2I (dB)SCO
Maximum Available Gain, MAG (dB)
InsertionNGain, |S21|2T(dB)INUED
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
10
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 35
TJ TSTG
Junction Temperature Storage Temperature
°C 1502 °C -65 to +150
Notes: 1. Operation in excess of any one of these parameters may result in
permanent damage. 2. Maximum TJ for the NE68035 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
14
13 12 11 10
9 8 7 6 5 4 3 2
1
NE68035 INSERTION GAIN vs. COLLECTOR CURRENT
VCE = 6 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
2 3 5 7 10 20 30 50 70 100
Collector Curren.