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NE68018 Dataheets PDF



Part Number NE68018
Manufacturers CEL
Logo CEL
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet NE68018 DatasheetNE68018 Datasheet (PDF)

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versio.

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NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 00 (CHIP) 18 (SOT 343 STYLE) E B 35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD) NE68018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 6V, 5 m A 3V, 5 mA 25 20 15 2.5 10 2.0 5 1.5 1.0 .5 300 500 1000 2000 3000 Frequency, f (GHz) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) California Eastern Laboratories NE680 SERIES DISCONTINUED ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT NF GNF MAG |S21E|2 hFE ICBO IEBO CRE3 PT RTH (J-A) RTH (J- C) Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz f = 2 GHz f = 4 GHz Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz f = 2 GHz f = 4 GHz Forward Current Gain2 at VCE = 6 V, IC = 10 mA VCE = 3 V, IC = 5 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA Emitter Cutoff Current at VEB = 1V, IC = 0 mA Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) NE68000 00 (CHIP) UNITS MIN TYP MAX NE68018 2SC5013 18 MIN TYP MAX NE68019 2SC5008 19 MIN TYP MAX GHz dB dB dB 10 1.7 2.4 2.6 10 1.6 1.8 3 10 1.7 1.9 dB 14 13.5 dB 12.5 10.2 9.6 dB 8 dB 18.5 19 18.5 dB 16.2 12.7 11.8 dB 10.2 8.2 7.3 dB 17 dB 10.5 12.5 dB 7.5 15.5 7.5 9.8 4.6 15 9.2 4.4 50 100 250 50 100 250 80 160 µA 1.0 1.0 1.0 µA 1.0 1.0 1.0 pF 0.3 0.7 0.3 0.7 mW 400 150 100 °C/W 833 1000 °C/W 120 200 200 ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS NE68030 NE68033 NE68035 NE68039/39R 2SC4228 30 2SC3585 33 2SC3587 35 2SC4095 39 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT NF GNF MAG |S21E|2 hFE ICBO IEBO Cre3 PT RTH (J-A) RTH (J- C) Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10 Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz dB dB dB 1.5 1.7 2.9 1.6 1.8 3.0 2.1 1.7 2.4 2.6 1.7 2.5 2.6 Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz dB dB dB 12.5 9.4 5.3 11.0 9.0 4.2 12.5 8 11 6.5 Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz f = 2 GHz f = 4 GHz dB dB dB 17 10.9 6.8 17 10.9 6.7 18.5 16.2 10.2 18 12.4 8.7 Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz f = 2 GHz f = 2 GHz dB dB dB 13.5 8.5 3.6 13 17 6.7 10.5 12.5 3.7 7.5 14.5 9.6 4.9 Forward Current Gain2 at VCE = 6 V, IC = 10 mA VCE = 3 V, IC = 5 mA 50 100 250 50 100 250 50 100 250 50 100 250 Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0 1.0 Feedback Capacitance at VCB = 3V, IE = 0 mA, f = 1 MHz VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 pF 0.3 0.8 0.2 0.7 0.25 0.8 Total Power Dissipation mW 150 200 290 200 Thermal Resistance (Junction to Ambient) °C/W 833 620 550 620 Thermal Resistance (Junction to Case) °C/W 200 200 200 200 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%. 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. InsertionDGain,|S21|2I (dB)SCO Maximum Available Gain, MAG (dB) InsertionNGain, |S21|2T(dB)INUED ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 TJ TSTG Junction Temperature Storage Temperature °C 1502 °C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum TJ for the NE68035 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 NE68035 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 6 V f = 2 GHz f = 3 GHz f = 4 GHz 2 3 5 7 10 20 30 50 70 100 Collector Curren.


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