NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRA...
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON
TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of
NPN epitaxial silicon
transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series.
00 (CHIP) 18 (SOT 343 STYLE)
E B
35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD)
NE68018 NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
6V, 5 m A 3V, 5 mA
25 20
15
2.5 10
2.0 5
1.5
1.0
.5 300 500
1000
2000
3000
Frequency, f (GHz)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
NE680 SERIES
DISCONTINUED
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
fT NF
GNF
MAG
|S21E|2
hFE ICBO IEBO CRE3 PT RTH (J-A) RTH (J- C)
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA
Noise Figure at VCE = 6 V, IC...