MMFT2N02EL

MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max The SOT−223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage VDS 20 Gate−to−Source Voltage − Continuous VGS ± 15 Drain Current − Continuous Drain Current − Pulsed ID 1.6 IDM 6.4 Total Power Dissipation @ TA = 25°C Derate above 25°C PD (Note 1.) 0.8 6.4 Unit Vdc Adc Watts mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Single Pulse ...