DatasheetsPDF.com
MTB09N06I3
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB09N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 9.3 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast S...
CYStech Electronics
Download MTB09N06I3 Datasheet
Similar Datasheet
MTB09N06FP
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB09N06I3
N-Channel Enhancement Mode Power MOSFET
- CYStech Electronics
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
