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JANSR2N7478T1

International Rectifier
Part Number JANSR2N7478T1
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Jan 27, 2016
Detailed Description PD-96961B IRHMS57Z60 RADIATION HARDENED JANSR2N7478T1 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) R...
Datasheet PDF File JANSR2N7478T1 PDF File

JANSR2N7478T1
JANSR2N7478T1

Overview
PD-96961B IRHMS57Z60 RADIATION HARDENED JANSR2N7478T1 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697 Product Summary 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57Z60 100K Rads (Si) 0.
0055Ω 45A* JANSR2N7478T1 IRHMS53Z60 300K Rads (Si) 0.
0055Ω 45A* JANSF2N7478T1 IRHMS54Z60 500K Rads (Si) 0.
0055Ω 45A* JANSG2N7478T1 IRHMS58Z60 1000K Rads (Si) 0.
0055Ω 45A* JANSH2N7478T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)...


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