BLF2425M6L180P; BLF2425M6LS180P
Power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1....
BLF2425M6L180P; BLF2425M6LS180P
Power LDMOS
transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power
transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS
PL(AV)
Gp
(MHz)
(mA) (V) (W)
(dB)
CW
2450
10
28 180
13.3
D (%) 53.5
1.2 Features and benefits
Easy power control Integrated ESD protection High efficiency Excellent thermal stability Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating.
NXP Semiconductors
BLF2425M6L(S)180P
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLF2425M6L180P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF2425M6LS180P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34 [1]
3 5
4
2
sym117
12
1
5
34 [1]
3 5
4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF2425M6L180P -
flanged balanced ceramic package; 2 mounting holes; 4 le...