BLF184XRG
Power LDMOS transistor
Rev. 1 — 18 December 2014
Product data sheet
1. Product profile
1.1 General descript...
BLF184XRG
Power LDMOS
transistor
Rev. 1 — 18 December 2014
Product data sheet
1. Product profile
1.1 General description
A 700 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 108
VDS
PL
(V) (W)
50 700
50 750
Gp (dB) 23.9 23.5
D (%) 73.5 81.9
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
NXP Semiconductors
BLF184XRG
Power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5
Pinning Description drain1 drain2 gate1 gate2 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
Table 3. Ordering information
Type number Package
Name Description
BLF184XRG -
earless flanged LDMOST ceramic package; 4 leads
Version SOT1214C
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
Min 6 65 [1] -
Max 135 +11 +150 225
Unit ...