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1SS349

Toshiba Semiconductor

Silicon Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC−59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse volt...



Toshiba Semiconductor

1SS349

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