1SS348

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.56V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current Power dissipation IO 100 mA P 200 mW Junction temperature Storage temperature Tj 125 °C Tstg −55~125 °C Operating Temperature Topr −40~100 °C JEDEC TD-236MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in TOSHIBA 1-3G1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.012g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR (1) CT Test Circuit Test Condition ― IF = 1mA ― IF = 10mA ― IF = 100mA ― VR = 80V ― VR = 0...