1SS345

Ordering number :EN3157B 1SS345 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection efficiency (VF=0.35V max) · High breakdown voltage (VR=55V). · Very small-sized package permitting the 1SS345applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS345] 1:Anode 2:No connection 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Reverse Burning Symbol VR IF P Tj Tstg Bo (C=25pF) Conditions Ratings 55 10 150 125 –55 to +125 2 Unit V mA mW ˚C ˚C erg Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Forward Current Reverse Voltage Reverse Current Interterminal Capacitance Symbol VR IF VR IR C IF=1mA VF=1V IR=100µA VR=40V VR=10V, f=1MHz 0.45 10 55 50 Conditions Ratings min typ max 0.35 Unit V mA V µA pF · Marking:AH Electrical Connection (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/53196GI (KOTO)/O259MO, TS 8-5744 No.3157-1/2 1SS345 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may...