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1SS344

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application 1SS344 Unit: mm z Low forward voltage : VF (3) = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reve...



Toshiba Semiconductor

1SS344

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