Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS337
Ultra High-Speed Switching Applications
1SS337
Unit: mm
z Small pac...
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS337
Ultra High-Speed Switching Applications
1SS337
Unit: mm
z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation
IFM IO IFSM P
600 * 200 *
6* 150
mA mA A mW
Junction temperature Storage temperature
Tj 150 °C JEDEC
Tstg
−55 to 150
°C
JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1F
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
...
Similar Datasheet