1SS336

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 600 * 200 * 6* 150 mA mA A mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55~150 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-3G1E temperature/current/voltage and the significant change in Weight: 0.012g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) V...