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1SS319

Part Number	1SS319
Manufacturer	Toshiba Semiconductor
Description	Silicon Epitaxial Schottky Barrier Type Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching  Small package: SC-61  L...
Datasheet	1SS319 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching  Small package: SC-61  Low forward voltage: VF (3) = 0.
54V (typ.
)  Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA 1.
CATHODE 1 2.
CATHODE 2 Power dissipation P 150 * mW 3.
ANODE 2 Junction temperature Tj 125 °C 4.
ANODE 1 SMQ Storage temperature Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of ...

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