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1SS315

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 30 125 −55~125 V mA °C °C Note: Using continuously under heav...



Toshiba Semiconductor

1SS315

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