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1SS311

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance : CT = 3.2pF (typ.) z Small package : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) C...



Toshiba Semiconductor

1SS311

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