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1SS309

Toshiba Semiconductor
Part Number 1SS309
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm z Small p...
Datasheet PDF File 1SS309 PDF File

1SS309
1SS309

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm z Small package : SC-74A z Low forward voltage : VF (3) = 0.
90V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 0.
9pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300 (*) 100 (*) 2 (*) 200 V V mA mA A mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy load...


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