1SS308

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 1SS308 Ultra High Speed Switching Applications Unit: mm z Small package : SC-74A z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 80 300 (*) 100 (*) 2 (*) 200 125 −55 to 125 V V mA mA A mW °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating JEITA TOSHIBA SC−74A 1−3H1A temperature/current/voltage, etc.) are within the absolute maximum Weight: 0.014g (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (...