Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
1SS307
General Puropose Rectifier Applications
Low forward volta...
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
1SS307
General Puropose Rectifier Applications
Low forward voltage Low reverse current Small total capacitance Small package
: VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC−59
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage
VRM VR
35
V
30
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
PD (Note 1, 3)
200
mW
PD (Note 2)
150
Junction temperature
Tj (Note 1)
150
°C
Tj (Note 2)
125
Storage temperature range
Tstg (Note 1)
−55 to 150
°C
Tstg (Note 2)
−55 to 125
JEDEC
TO−236MOD
JEITA
SC−59
TOSHIBA
2-3F1S
Weight: 12 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: For devices with the ordering part number ending in LF(T.
Note 2: For devices ...
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