1SS302

www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.90V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 (*) 100 (*) 2 (*) 100 125 −55~125 Unit V V mA mA A mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 1-2P1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time I...