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BZT52H-B10 Dataheets PDF



Part Number BZT52H-B10
Manufacturers NXP
Logo NXP
Description Single Zener diodes
Datasheet BZT52H-B10 DatasheetBZT52H-B10 Datasheet (PDF)

BZT52H series Single Zener diodes in a SOD123F package Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ Total power dissipation: ≤ 830 mW „ Wide working voltage range: nominal 2.4 V to 75 V (E24 range) „ Small plastic package suitable for surface-mounted design „ Low differential resistance „ AEC-Q101 qualified 1.3 App.

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BZT52H series Single Zener diodes in a SOD123F package Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ Total power dissipation: ≤ 830 mW „ Wide working voltage range: nominal 2.4 V to 75 V (E24 range) „ Small plastic package suitable for surface-mounted design „ Low differential resistance „ AEC-Q101 qualified 1.3 Applications „ General regulation functions 1.4 Quick reference data Table 1. Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Conditions IF = 10 mA Tamb ≤ 25 °C Min Typ Max Unit [1] - - 0.9 V [2] - - 375 mW [3] - - 830 mW [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The marking bar indicates the cathode. Simplified outline [1] 12 Graphic symbol 12 006aaa152 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description BZT52H-B2V4 to BZT52H-C75[1] - plastic surface-mounted package; 2 leads [1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. Version SOD123F Table 4. Marking codes Type number Marking code BZT52H-B2V4 DC BZT52H-B2V7 DD BZT52H-B3V0 DE BZT52H-B3V3 DF BZT52H-B3V6 DG BZT52H-B3V9 DH BZT52H-B4V3 DJ BZT52H-B4V7 DK BZT52H-B5V1 DL BZT52H-B5V6 DM BZT52H-B6V2 DN BZT52H-B6V8 DP BZT52H-B7V5 DQ BZT52H-B8V2 DR BZT52H-B9V1 DS BZT52H-B10 DT BZT52H-B11 DU BZT52H-B12 DV BZT52H-B13 DW Type number BZT52H-B15 BZT52H-B16 BZT52H-B18 BZT52H-B20 BZT52H-B22 BZT52H-B24 BZT52H-B27 BZT52H-B30 BZT52H-B33 BZT52H-B36 BZT52H-B39 BZT52H-B43 BZT52H-B47 BZT52H-B51 BZT52H-B56 BZT52H-B62 BZT52H-B68 BZT52H-B75 - Marking code DX DY DZ E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF - Type number BZT52H-C2V4 BZT52H-C2V7 BZT52H-C3V0 BZT52H-C3V3 BZT52H-C3V6 BZT52H-C3V9 BZT52H-C4V3 BZT52H-C4V7 BZT52H-C5V1 BZT52H-C5V6 BZT52H-C6V2 BZT52H-C6V8 BZT52H-C7V5 BZT52H-C8V2 BZT52H-C9V1 BZT52H-C10 BZT52H-C11 BZT52H-C12 BZT52H-C13 Marking code B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BJ BK BL BM Type number BZT52H-C15 BZT52H-C16 BZT52H-C18 BZT52H-C20 BZT52H-C22 BZT52H-C24 BZT52H-C27 BZT52H-C30 BZT52H-C33 BZT52H-C36 BZT52H-C39 BZT52H-C43 BZT52H-C47 BZT52H-C51 BZT52H-C56 BZT52H-C62 BZT52H-C68 BZT52H-C75 - Marking code BN BP BQ BR BS BT BU BV BW BX BY BZ C1 C2 C3 C4 C5 C6 - BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min IF forward current IZSM non-repetitive peak reverse current - PZSM Ptot Tj Tamb Tstg non-repetitive peak reverse power dissipation total power dissipation Tamb ≤ 25 °C junction temperature ambient temperature storage temperature [1] - [2] [3] - −65 −65 Max Unit 250 mA see Table 8, 9 and 10 40 W 375 830 150 +150 +150 mW mW °C °C °C [1] tp = 100 μs; square wave; Tj = 25 °C prior to surge. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit [1] - - 330 K/W [2] - - 150 K/W [3] - - 70 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions VF forward voltage IF = 10 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit [1] - - 0.9 V Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 5 mA Maximum differential Reverse resistance rdif (Ω) current IR (μA) Min Max IZ = 1 mA I.


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