1SS286
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-302A (Z) Rev. 1 Sep. 1995 Feat...
1SS286
Silicon
Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-302A (Z) Rev. 1 Sep. 1995 Features
Very low reverse current. Detection efficiency is very good. Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD
Outline
7
1 Cathode band
2
1. Cathode 2. Anode
1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100 –55 to +100 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability Symbol VF VR IR C ∆C ∆VF — Min — 25 — — — — 10 Typ — — — — — — — Max 0.6 — 10 1.2 0.1 10 — Unit V V nA pF pF mV V Test Condition IF = 10mA IR = 10µA VR= 10V VR = 0V, f = 1MHz VR = 0V, f = 1MHz IF = 10mA * C = 200pF, Both forward and reverse direction 1 pulse.
1
Notes: 1. Failure criterion; IR ≥ 20µA 2. Each group shall unify a multiple of 4 diodes
Rev.1, Sep. 1995, page 2 of 6
1SS286
10
–1
10–2 10
–3
Forward current I F (A)
10 –4 10 10
–5
–6
10 10
–7
–8 –9
10
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
Fig.1 Forward current Vs. Forward voltage
–6
10
Reverse current I R (A)
10
–7
10
–8
10
–9
10
–10
0
5
10 20 15 Reverse voltage VR (V)
25
Fig.2 Reverse current Vs. Reverse voltage
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