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1SS272

Toshiba Semiconductor
Part Number 1SS272
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application  Low forward voltage : VF (...
Datasheet PDF File 1SS272 PDF File

1SS272
1SS272

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application  Low forward voltage : VF (3) = 0.
92V (typ.
)  Fast reverse recovery time : trr = 1.
6ns (typ.
)  Small total capacitance : CT = 0.
9pF (typ.
) 1SS272 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 * mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55 to 150 °C ...


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