1SS250

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Ultra High Speed Switching Application 1SS250 Unit: mm z Low forward voltage : VF (2) = 0.90V (typ.) z Fast reverse recovery time : trr = 60ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Peak reverse voltage VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 2A Power dissipation P 150 mW Junction temperature Storage temperature range Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA − SC−59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1−3G1B Weight: 0.012g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 1...