MPF930

MPF930 TMOS Switching N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage Gate−Source Voltage — Continuous — Non−repetitive (tp ≤ 50 μs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VDS VDG VGS VGSM ID IDM PD MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.0 3.0 1.0 8.0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc W mW/°C http://onsemi.com CASE 29−05, STYLE 22 TO−92 (TO−226AE) 1 23 3 DRAIN Operating and Storage Junction Temperature Range TJ, Tstg −55 to 150 °C 2 GATE Thermal Resistance θJA 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min 1 SOURCE Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) MPF930 MPF960 MPF990 V(BR)DSX Vdc 35 — — 60 — — 90 — — Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS(2) Zero−Gate−Voltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 0.5 Adc) (ID = 1.0 Adc) (ID = 2.0 Adc) MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 IGSS — — 50 nAdc IDSS — — 10 μAdc VGS(Th) 1.0 — 3.5 Vdc VDS(on) — — — — — — — — — Vdc 0.4 0.7 0.6 0.8 0.6 1.2 0.9 1.4 1.2 1.7 1.2 2.4 2.2 3.0 2.8 3.5 2.8 4.8 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. © Semicond...