Document
MCR264−4, MCR264−6, MCR264−8
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
• 400 Amperes Surge Capability • Blocking Voltage to 600 Volts • Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage(1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) MCR264−4 MCR264−6 MCR264−8
VDRM, VRRM
200 400 600
Unit Volts
On-State RMS Current (TC = 80°C; 180° Conduction Angles)
Average On-State Current (TC = 80°C; 180° Conduction Angles)
Peak Non-repetitive Surge Current (TC = 80°C) (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 80°C)
Forward Average Gate Power (t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 80°C)
Operating Junction Temperature Range
IT(RMS) IT(AV) ITSM
PGM PG(AV)
IGM TJ
40 A
25 A
A 400
450 20 Watts
0.5 Watt
2.0 A
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents.
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SCRs 40 AMPERES RMS 200 thru 600 VOLTS
G AK
4
12 3
TO−220AB CASE 221A
STYLE 3
PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR264−4
TO220AB
500/Box
MCR264−6
TO220AB
500/Box
MCR264−8
TO220AB
500/Box
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number: MCR264−4/D
MCR264−4, MCR264−6, MCR264−8
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
RθJA TL
60 260
°C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C TJ = 125°C
ON CHARACTERISTICS
IDRM, IRRM — — 10 μA — — 2.0 mA
Peak Forward On−State Voltage(1) (ITM = 80 A)
Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms, TC = − 40°C)
Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time (ITM = 40 A, IGT = 60 mAdc)
DYNAMIC CHARACTERISTICS
VTM — 1.4 2.0 Volts
IGT — 15 50 mA — 30 90
VGT — 1.0 1.5 Volts
VGD
0.2 —
— Volts
IH — 30 60 mA
tgt — 1.5 — μs
Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
dv/dt
— 50 — V/μs
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MCR264−4, MCR264−6, MCR264−8
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current
IRRM at VRRM
on state
Reverse Blocking Region (off state)
Reverse Avalanche Region Anode −
VTM
IH
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
125
115
105
95 85 75
0
α α = CONDUCTION ANGLE
dc
α = 30° 60°
90°
5.0 10 15 20
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
180° 25
50 45 180°
40 90°
35 60°
30 α = 30°
dc
25
20
15
10 α 5.0 α = CONDUCTIVE ANGLE
0 0 5.0 10 15 20 25
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 2. Maximum On−State Power Dissipation
TC, MAXIMUM CASE TEMPERATURE (° C) P(AV), AVERAGE POWER (WATTS)
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IGT , GATE TRIGGER CURRENT (mA)
IH , HOLDING CURRENT (mA)
MCR264−4, MCR264−6, MCR264−8
40
OFF-STATE VOLTAGE = 12 V 20
10
7.0
5.0 4.0
−60
−40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current
140
VGT , GATE TRIGGER VOLTAGE (VOLTS)
1.1
1.0 OFF-STATE VOLTAGE = 12 V
0.9
0.8
0.7
0.6
0.5
0.4 −60
−40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Gate Trigger Voltage
140
70 100 50 OFF-STATE VOLTAGE = 12 V
30 TJ = 25°C.