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MCR264-4 Dataheets PDF



Part Number MCR264-4
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Controlled Rectifiers
Datasheet MCR264-4 DatasheetMCR264-4 Datasheet (PDF)

MCR264−4, MCR264−6, MCR264−8 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 400 Amperes Surge Capability • Blocking Voltage to 600 Volts • Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwis.

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MCR264−4, MCR264−6, MCR264−8 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 400 Amperes Surge Capability • Blocking Voltage to 600 Volts • Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) MCR264−4 MCR264−6 MCR264−8 VDRM, VRRM 200 400 600 Unit Volts On-State RMS Current (TC = 80°C; 180° Conduction Angles) Average On-State Current (TC = 80°C; 180° Conduction Angles) Peak Non-repetitive Surge Current (TC = 80°C) (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 80°C) Operating Junction Temperature Range IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ 40 A 25 A A 400 450 20 Watts 0.5 Watt 2.0 A −40 to +125 °C Storage Temperature Range Tstg −40 to °C +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. http://onsemi.com SCRs 40 AMPERES RMS 200 thru 600 VOLTS G AK 4 12 3 TO−220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR264−4 TO220AB 500/Box MCR264−6 TO220AB 500/Box MCR264−8 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MCR264−4/D MCR264−4, MCR264−6, MCR264−8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 °C/W Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds RθJA TL 60 260 °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS IDRM, IRRM — — 10 μA — — 2.0 mA Peak Forward On−State Voltage(1) (ITM = 80 A) Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms, TC = − 40°C) Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 40 A, IGT = 60 mAdc) DYNAMIC CHARACTERISTICS VTM — 1.4 2.0 Volts IGT — 15 50 mA — 30 90 VGT — 1.0 1.5 Volts VGD 0.2 — — Volts IH — 30 60 mA tgt — 1.5 — μs Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. dv/dt — 50 — V/μs http://onsemi.com 2 MCR264−4, MCR264−6, MCR264−8 Voltage Current Characteristic of SCR + Current Anode + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current IRRM at VRRM on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − VTM IH + Voltage IDRM at VDRM Forward Blocking Region (off state) 125 115 105 95 85 75 0 α α = CONDUCTION ANGLE dc α = 30° 60° 90° 5.0 10 15 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating 180° 25 50 45 180° 40 90° 35 60° 30 α = 30° dc 25 20 15 10 α 5.0 α = CONDUCTIVE ANGLE 0 0 5.0 10 15 20 25 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 2. Maximum On−State Power Dissipation TC, MAXIMUM CASE TEMPERATURE (° C) P(AV), AVERAGE POWER (WATTS) http://onsemi.com 3 IGT , GATE TRIGGER CURRENT (mA) IH , HOLDING CURRENT (mA) MCR264−4, MCR264−6, MCR264−8 40 OFF-STATE VOLTAGE = 12 V 20 10 7.0 5.0 4.0 −60 −40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current 140 VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.1 1.0 OFF-STATE VOLTAGE = 12 V 0.9 0.8 0.7 0.6 0.5 0.4 −60 −40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Gate Trigger Voltage 140 70 100 50 OFF-STATE VOLTAGE = 12 V 30 TJ = 25°C.


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