1SS201

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) 1SS201 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 200 mW JEDEC ― Junction temperature Storage temperature range Tj Tstg 125 °C EIAJ ― −55~125 °C TOSHIBA Weight: 0.13g 1−4E2A (*) Unit rating. Total rating = Unit rating ×1.5. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 1mA ― IF = 10mA ― IF = 100mA ― VR = 30V ― VR = 80V ― VR = 0, f = 1MHz ― IF = 10mA (Fig.1) Min Typ. Max Unit ― 0.60 ― ― 0.72 ― V ― 0.90 1.20 ― ― 0.1 µA ― ― 0.5 ― 0.9 3.0 pF ― 1.6 4.0 ns 961001EAA2 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, an...