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1SS200

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage...



Toshiba Semiconductor

1SS200

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