MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD
MGBR30L80
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR30L80 is ...
Description
UNISONIC TECHNOLOGIES CO., LTD
MGBR30L80
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR30L80 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop * High switching speed
SYMBOL
1
DIODE
TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR30L80L-TA3-T
MGBR30L80G-TA3-T
Note: Pin Assignment: A: Anode K: Cathode
Package TO-220
Pin Assignment 123 AKA
Packing Tube
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R204-043.b
MGBR30L80
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM 80 V
WorkingPeak Reverse Voltage Repetitive Peak Reverse Voltage
VRWM VRRM
80 80
V V
RMS Reverse Voltage Average Rectified Output Current
TC=140°C
VR(RMS) IO
56 30
V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not...
Similar Datasheet