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MGBR30L80

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR30L80 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L80 is ...


UTC

MGBR30L80

File Download Download MGBR30L80 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30L80 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L80 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL 1 DIODE TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR30L80L-TA3-T MGBR30L80G-TA3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 Pin Assignment 123 AKA Packing Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-043.b MGBR30L80 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 80 V WorkingPeak Reverse Voltage Repetitive Peak Reverse Voltage VRWM VRRM 80 80 V V RMS Reverse Voltage Average Rectified Output Current TC=140°C VR(RMS) IO 56 30 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 200 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not...




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