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MGBR10U300

UTC

MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10U300 MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10U300 is a surface moun...


UTC

MGBR10U300

File Download Download MGBR10U300 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10U300 MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10U300 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10U300L-TN3-R MGBR10U300G-TN3-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-252 Pin Assignment 123 AKA Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-048.B MGBR10U300 DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 300 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 300 300 V V Average Rectified Output Current TC=140°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 160 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS (Note 3) ...




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