Document
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW20N65R5
Datasheet IndustrialPowerControl
ResonantSwitchingSeries
IHW20N65R5
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
Applications:
•Inductioncooking •Inverterizedmicrowaveovens •Resonantconverters
G
G C E
C E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IHW20N65R5
650V 20A
1.35V
Tvjmax 175°C
Marking H20ER5
Package PG-TO247-3
2 Rev.2.2,2014-11-27
ResonantSwitchingSeries
IHW20N65R5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3 Rev.2.2,2014-11-27
IHW20N65R5
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax
VCE IC ICpuls
650 V
40.0 A 20.0 60.0 A
Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C Diodepulsedcurrent,tplimitedbyTvjmax Gate-emitter voltage PowerdissipationTC=25°C PowerdissipationTC=100°C Operating junction temperature Storage temperature
- 60.0 A
IF
IFpuls VGE Ptot Tvj Tstg
19.0 10.0
60.0
±20
150.0 75.0
-40...+175
-55...+150
A
A V W °C °C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s
260 °C
Mounting torque, M3 screw Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Diode thermal resistance, junction - case
Thermal resistance junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-c) Rth(j-a)
Max.Value
Unit
1.00 K/W 4.68 K/W 40 K/W
4 Rev.2.2,2014-11-27
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance Integrated gate resistor
IGES gfs rG
VGE=0V,IC=0.50mA VGE=15.0V,IC=20.0A Tvj=25°C Tvj=175°C VGE=0V,IF=20.0A Tvj=25°C Tvj=175°C IC=0.20mA,VCE=VGE VCE=650V,VGE=0V Tvj=25°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=20.0A
IHW20N65R5
min.
Value typ.
max. Unit
650 -
-V
- 1.35 1.70 V - 1.60 -
- 1.70 2.10 V - 2.00 -
3.2 4.0 4.8 V
- - 40.0 µA - 600.0 -
- - 100 nA
- 60.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance Output capacitance Reverse transfer capacitance
Gate charge
Internal emitter inductance measured 5mm (0.197 in.) from case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V.