IDW15G120C5B

Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Power Control IDW15G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant 1 2 CASE 3 Benefits  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  RelatedLinks: www.infineon.com/sic Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 – anode 1  Pin 2 and backside – cathode  Pin 3 – anode 2 Key Performance and Package Parameters (leg/device) Type IDW15G120C5B VDC 1200V IF 7.5 / 15 A QC 41 / 82 nC Tj,max Marking 175°C D1512B5 Package PG-TO247-3 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 201...