PJQ5478

PPJQ5478 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 60A DFN5060-8L Features  RDS(ON) , VGS@10V, ID@30A<12mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.08 grams  Marking: Q5478 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TC=25oC TC=100oC TC=25oC TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC TA=70oC Single Pulse Avalanche Energy(Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 60 38 150 83 33 9 7.5 2.0 1.3 156 -55~150 1.5 62.5 UNITS V V A W A A W mJ oC oC/W August 18,2015-REV.00 Page 1 PPJQ5478 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Tot...