Document
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4411/ME4411-G
FEATURES
● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦13mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter
Ordering Information: ME4411 (Pb-free) ME4411-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous DrainCurrent*
Pulsed Drain Current Avalanche Current
TA=25℃ TA=70℃
Avalanche Energy with Single Pulse(L=0.1mH)
Maximum Power Dissipation*
TA=25℃ TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol VDS VGS
ID
IDM IAR EAS
PD
TJ RθJA
Maximum Ratings
-30 ±20 -12.5 -10 -50 -42 88.2 2.5 1.6 -55 to 150 50
Unit V V
A
A A mJ
W
℃ ℃/W
Jun,2012-Ver1.3
01
P-Channel 30V (D-S) MOSFET
ME4411/ME4411-G
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol STATIC V(BR)DSS VGS(th) IGSS IDSS
Parameter
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Rg Gate Resistance
Ciss Input capacitance
Coss
Output Capacitance
Crss
td(on) tr td(off) tf
Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time
Limit
VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VDS=0V, VGS=±20V VDS=-30V, VGS=0V VGS=-10V, ID= -13A VGS=-4.5V, ID= -10A IS=-2.7A, VGS=0V
VDS=-15V, VGS=-10V, ID=-13A
VDS=-15V, VGS=-4.5V, ID=-13A
VGS=0V, VDS=0V, f=1MHZ
VDS=-15V, VGS=0V, f=1MHz
VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V RG=6Ω
Min Typ Max Unit
-30 V
-1 -3 V
±100 nA
-1 μA
8.3 10 mΩ
10 13
-0.74
V
83.2 41 12 17.7 5.6 3790 468 381 48 20.9 274 80.2
nC Ω pF
ns
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jun,2012-Ver1.3
02
P-Channel 30V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)
ME4411/ME4411-G
Jun,2012-Ver1.3
03
.