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ME4411 Dataheets PDF



Part Number ME4411
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME4411 DatasheetME4411 Datasheet (PDF)

P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed.

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4411/ME4411-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦13mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter Ordering Information: ME4411 (Pb-free) ME4411-G (Green product-Halogen free ) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous DrainCurrent* Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Avalanche Energy with Single Pulse(L=0.1mH) Maximum Power Dissipation* TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS ID IDM IAR EAS PD TJ RθJA Maximum Ratings -30 ±20 -12.5 -10 -50 -42 88.2 2.5 1.6 -55 to 150 50 Unit V V A A A mJ W ℃ ℃/W Jun,2012-Ver1.3 01 P-Channel 30V (D-S) MOSFET ME4411/ME4411-G Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC V(BR)DSS VGS(th) IGSS IDSS Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistancea VSD Diode Forward Voltage DYNAMIC Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input capacitance Coss Output Capacitance Crss td(on) tr td(off) tf Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Limit VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VDS=0V, VGS=±20V VDS=-30V, VGS=0V VGS=-10V, ID= -13A VGS=-4.5V, ID= -10A IS=-2.7A, VGS=0V VDS=-15V, VGS=-10V, ID=-13A VDS=-15V, VGS=-4.5V, ID=-13A VGS=0V, VDS=0V, f=1MHZ VDS=-15V, VGS=0V, f=1MHz VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V RG=6Ω Min Typ Max Unit -30 V -1 -3 V ±100 nA -1 μA 8.3 10 mΩ 10 13 -0.74 V 83.2 41 12 17.7 5.6 3790 468 381 48 20.9 274 80.2 nC Ω pF ns Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. Jun,2012-Ver1.3 02 P-Channel 30V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) ME4411/ME4411-G Jun,2012-Ver1.3 03 .


CL21B106KQQNNNE ME4411 ME4411-G


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