UNISONIC TECHNOLOGIES CO., LTD
MMDT5551
DUAL TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
DESCRIPTION
The UTC MMDT...
UNISONIC TECHNOLOGIES CO., LTD
MMDT5551
DUAL
TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC MMDT5551 is a high voltage fast-switching dual
NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
FEATURES
* High Collector-Emitter Voltage: VCEO=160V * High current gain
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number MMDT5551G-AL6-R
Package SOT-363
Pin Assignment 123456 E1 B1 C2 E2 B2 C1
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R218-022.C
MMDT5551
DUAL
TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC 600 mA
Power Dissipation
PD 200 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100A, IE=0
Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO IE=10A, IC=0
Collector Cut-off Current
ICBO VCB=120V, ...