TIG074E8

Ordering number : ENA2209 TIG074E8 N-Channel IGBT 400V, 150A, VCE(sat); 3.8V Single ECH8 http://onsemi.com Features Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance Low voltage drive (2.5V) Built-in Gate to Emitter protection diode dv / dt guarantee* Application Light-Controlling Flash Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions P-channel Collector to Emitter Voltage Gate to Emitter Voltage (DC) Gate to Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector to Emitter dv / dt Channel Temperature VCES VGES VGES ICP dv / dt Tj PW≤1ms VGE=2.5V, CM=200μF Turn off Ic=150A, VCE≤320V, starting Tch=25°C 400 ±4 ±5 150 400 150 Storage Temperature Tstg -40 to +150 * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1. Unit V V V A V / μs °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector to Emitter Breakdown Voltage Collector to Emitter Cutoff Current Gate to Emitter Leakage Current Gate to Emitter Threshold Voltage Collector to Emitter Saturation Vol...