N-Channel Power MOSFET
Ordering number : ENA2218
NDUL03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-3PF-3L
http://onsemi.com
Features...
Description
Ordering number : ENA2218
NDUL03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-3PF-3L
http://onsemi.com
Features
ON-resistance RDS(on)=8Ω (typ.) Input capacitance Ciss=650pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=10mH, IAV=2.5A (Fig.1) *2 L≤10mH, single pulse
Conditions
Limited only maximum temperature Tch=150°C PW≤10μs, duty cycle≤1% Tc=25°C
TO-3PF-3L
Ratings 1500 ±30 2.5 5 3.0 50 150
--55 to +150 34 2.5
Unit V V A A W W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Dr...
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