Document
MOSFET – Power, Dual, N-Channel, For 1-2 Cells Lithium-ion Battery Protection
24 V, 11.6 mW, 10 A,
ECH8697R
Description This Power MOSFET features a low on−state resistance. This
device is suitable for applications such as power switches of portable machines. Best suited for 1−2 cells Lithium−ion Battery applications.
Features
• Low On−Resistance • 2.5 V Drive • Common−Drain Type • ESD Diode−Protected Gate • Built−in Gate Protection Resistor • These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• 1−2 cells Lithium−ion Battery Charging and Discharging Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Symbol
Parameter
Value
Unit
VDSS VGSS
ID IDP
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1%
24
V
±12.5
V
10
A
60
A
PD
Power Dissipation
Surface mounted on ceramic substrate
(1000 mm2 x 0.8 mm) 1 unit
1.5
W
PT
Total Dissipation
Surface mounted on ceramic substrate
(1000 mm2 x 0.8 mm)
1.6
W
Tj
Junction Temperature
150
°C
Tstg Storage Temperature
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.onsemi.com
VDSS 24 V
RDS(on) Max 11.6 mW @ 4.5 V 12.6 mW @ 4.0 V
15 mW @ 3.1 V 17.5 mW @ 2.5 V
ID Max 10 A
ELECTRICAL CONNECTION N−Channel
8
7
6
5
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
1
2
3
4
SOT−28FL/ECH8 CASE 318BF
MARKING DIAGRAM UU
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJA Junction to Ambient Surface mounted on ceramic substrate (1000 mm2 x 0.8 mm) 1 unit
© Semiconductor Components Industries, LLC, 2013
1
November, 2022 − Rev 4
Value 83.3
Unit °C/W
Publication Order Number: ECH8697R/D
ECH8697R
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Value
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS IDSS IGSS
VGS(th) gFS
RDS(on)
Drain to Source Breakdown Voltage Zero−Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On−State Resistance
td(on) tr
td(off) tf
td(on) tr
td(off) tf Qg
Turn−ON Delay Time Rise Time Turn−OFF Delay Time Fall Time Turn−ON Delay Time Rise Time Turn−OFF Delay Time Fall Time Total Gate Charge
ID = 1 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VGS = ±8 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5 A ID = 5 A, VGS = 4.5 V ID = 5 A, VGS = 4.0 V ID = 5 A, VGS = 3.1 V ID = 2.5 A, VGS = 2.5 V See Figure 1 (Note 1)
See Figure 2 (Note 1)
24
−
−
V
−
−
1
mA
−
−
±1
mA
0.5
−
1.3
V
−
5.0
−
S
7.4
9.3
11.6
mΩ
7.7
9.7
12.6
mΩ
8.5
10.7
15
mΩ
10
12.5
17.5
mΩ
−
160
−
ns
−
230
−
ns
−
19.7
−
ms
−
23.6
−
ms
−
160
−
ns
−
230
−
ns
−
980
−
.